40 C.F.R. § 98 app Table I-4 to Subpart I of Part 98

Current through May 31, 2024
Appendix Table I-4 to Subpart I of Part 98 - Default Emission Factors (1-U[ij]) for Gas Utilization Rates (U[ij]) and By-Product Formation Rates (B[ijk]) for Semiconductor Manufacturing for 300 mm and 450 mm Wafer Size

Table I-4 to Subpart I of Part 98-Default Emission Factors (1-Uij) for Gas Utilization Rates (Uij) and By-Product Formation Rates (Bijk) for Semiconductor Manufacturing for 300 mm and 450 mm Wafer Size

Process type/sub-typeProcess gas i
CF4C2F6CHF3CH2F2CH3FC3F8C4F8NF3SF6C4F6C5F8C4F8O
Etching/Wafer Cleaning
1-Ui0.650.800.420.210.330.300.180.150.320.150.10NA
BCF4NA0.210.0950.0490.0450.210.0450.0460.0400.0590.11NA
BC2F60.079NA0.0640.0520.000870.180.0310.0450.0440.0740.083NA
BC4F6NANA0.00010NANANA0.018NANANANANA
BC4F80.00063NA0.00080NANANANANANANANANA
BC3F8NANANANANANANANANANA0.00012NA
BCHF30.011NANA0.0500.00570.0120.0270.0250.00370.0190.0069NA
BCH2F2NANA0.0036NA0.0023NA0.00150.000860.0000290.000030NANA
BCH3F0.0080NA0.00800.0080NA0.00073NA0.0080NANANANA
Chamber Cleaning
In situ plasma cleaning:
1-UiNANANANANANANA0.23NANANANA
BCF4NANANANANANANA0.037NANANANA
BC2F6NANANANANANANANANANANANA
BC3F8NANANANANANANANANANANANA
Remote Plasma Cleaning:
1-UiNANANANANA0.063NA0.017NANANANA
BCF4NANANANANANANA0.075NANANANA
BC2F6NANANANANANANANANANANANA
BC3F8NANANANANANANANANANANANA
In Situ Thermal Cleaning:
1-UiNANANANANANANA0.28NANANANA
BCF4NANANANANANANA0.010NANANANA
BC2F6NANANANANANANANANANANANA
BC3F8NANANANANANANANANANANANA

Notes: NA = Not applicable; i.e., there are no applicable default emission factor measurements for this gas. This does not necessarily imply that a particular gas is not used in or emitted from a particular process sub-type or process type.

40 C.F.R. 98 app Table I-4 to Subpart I of Part 98

81 FR 89256, Dec. 9, 2016
81 FR 89256, 1/1/2018