Ex Parte Sriram et alDownload PDFPatent Trial and Appeal BoardJan 30, 201813652754 (P.T.A.B. Jan. 30, 2018) Copy Citation United States Patent and Trademark Office UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O.Box 1450 Alexandria, Virginia 22313-1450 www.uspto.gov APPLICATION NO. FILING DATE FIRST NAMED INVENTOR ATTORNEY DOCKET NO. CONFIRMATION NO. 13/652,754 10/16/2012 Saptharishi Sriram 5308-1031DV 9671 65106 7590 MYERS BIGEL, P.A. P.O. BOX 37428 RALEIGH, NC 27627 EXAMINER YEUNG LOPEZ, FEIFEI ART UNIT PAPER NUMBER 2899 NOTIFICATION DATE DELIVERY MODE 02/01/2018 ELECTRONIC Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the following e-mail address(es): u spto @ my ersbigel. com PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE BEFORE THE PATENT TRIAL AND APPEAL BOARD Ex parte SAPTHARISHI SRIRAM and QINGCHUN ZHANG Appeal 2017-003338 Application 13/652,754 Technology Center 2800 Before MICHAEL P. COLAIANNI, JULIA HEANEY, and JENNIFER R. GUPTA, Administrative Patent Judges. HEANEY, Administrative Patent Judge. DECISION ON APPEAL1 Appellant2 requests review pursuant to 35 U.S.C. § 134(a) of a decision of the Examiner to reject claims 1 and 3-12 of Application 13/652,754. We have jurisdiction under 35 U.S.C. § 6(b). We affirm. 1 This Decision includes citations to the following documents: Specification filed Oct. 16, 2012 (“Spec.”); Final Rejection dated Mar. 25, 2015 (“Final Act.”); Appeal Brief filed Nov. 17, 2015 (“Br.”); corrected Claims Appendix filed Feb. 29, 2016 (“Claims App.”); and Examiner’s Answer dated July 20, 2016 (“Ans.”). 2 Appellant is the Applicant, Cree, Inc., which is also identified as the real party in interest. Br. 1. Appeal 2017-003338 Application 13/652,754 BACKGROUND The subject matter on appeal relates to a Schottky diode. Br. 2. Spec. ^ 3. Claim 1, reproduced below, is illustrative of the claimed subject matter: 1. A Schottky diode, comprising: a drift layer on a first surface of a semiconductor substrate; a passivation layer on the drift layer, the passivation layer defining a trench; a polysilicon layer in the trench on a portion of the drift layer exposed by the trench and on a surface of the passivation layer; and an anode contact on a surface of the poly-silicon layer [an anode contact on]3, the passivation layer being free of the anode contact, wherein the drift layer comprises a layer including gallium nitride (GaN) and the semiconductor substrate comprises GaN. Claims App. 11. 3 The bracketed claim language, “an anode contact on” that appears in the corrected Claims Appendix filed February 29, 2016, appears to be a typographical error. See Br. 6-7, 11 (indicating a strikethrough of bracketed claim language). 2 Appeal 2017-003338 Application 13/652,754 THE REJECTIONS4 The Examiner maintains the following rejections of appeal: 1. Claims 1, 3, 4, and 6 are rejected under 35 U.S.C. § 103(a) as unpatentable over the combination of Hayashi,5 Korec,6 and Cao.7 Final Act. 13-14. 2. Claim 5 is rejected under 35 U.S.C. § 103(a) as unpatentable over the combination of Hayashi, Korec, Cao, and Shimoida.8 Final Act. 15-16. 3. Claim 7 is rejected under 35 U.S.C. § 103(a) as unpatentable over the combination of Hayashi, Korec, Cao, and Parikh.9 Final Act. 18. 4. Claims 8-12 are rejected under 35 U.S.C. § 103(a) as unpatentable over the combination of Hayashi, Korec, Cao, and Shimoida. Final Act. 19-21. 4 The Examiner withdrew the rejection of claim 5 under 35 U.S.C. § 112, first paragraph, and the rejections of claims 1 and 3-12 as unpatentable under 35 U.S.C. § 103(a) over combinations of references different from those proposed in Rejections 1—4 herein. Ans. 3. 5 Hayashi, US 2007/0235745 Al, Oct. 11, 2007. 6 Korec, US 2002/0125541 Al, Sept. 12, 2002. 7 Cao, US 2007/0096239 Al, May 3, 2007. 8 Shimoida, US 2004/0031971 Al, Feb. 19, 2004. 9 Parikh, US 2003/0015708 Al, Jan. 23, 2003. 3 Appeal 2017-003338 Application 13/652,754 DISCUSSION Appellant argues independent claims 1 and 8 as a group and do not separately argue the dependent claims. Br. 6-7. In accordance with 37 C.F.R. § 41.37(c)(l)(iv), we select claim 1 as representative and decide the appeal based on the representative claim alone. The Examiner finds that Hayashi teaches a Schottky diode comprising the components of claim 1, except that Hayashi does not teach a passivation layer, or a drift layer and substrate comprising gallium nitride (GaN), but rather teaches a drift layer and substrate comprising SiC. Final Act. 57- 59, 61-62, providing citations to Hayashi. The Examiner finds that Korec teaches making an oxide layer a passivation layer, and determines that it would have been obvious to a person of ordinary skill in the art to make Hayashi’s oxide layer a passivation layer in order to provide the benefit of passivating the device when forming the electrode, as taught by Korec. Final Act. ^ 60, providing citations to Korec. The Examiner further finds that Cao discloses the claimed GaN drift layer, and further teaches that devices based on GaN materials, as compared to SiC, have superior high voltage and high frequency operation. Final Act. 63, providing citations to Cao. The Examiner thus determines it would have been obvious to a person of ordinary skill in the art to replace the SiC material of Hayashi’s drift layer and substrate with GaN, to obtain the benefits taught by Cao. Final Act. 64. 4 Appeal 2017-003338 Application 13/652,754 Appellant does not dispute the Examiner’s findings regarding Hayashi.10 Br. 8. Appellant argues that the rejection improperly applies hindsight in determining that the combination of Shimoida, Korec, and Cao discloses a Schottky diode having all of the elements of claim 1, because a person of ordinary skill in the art would not look to Cao for a drift layer comprising GaN. Br. 6. Appellant’s argument is not persuasive of reversible error. Appellant does not explain why a person of ordinary skill would not have looked to Cao, nor does Appellant address the Examiner’s specific findings regarding Cao, which are supported by the record. The Examiner responds to Appellant’s argument in the Answer (Ans. 4-5), and Appellant does not contest the Examiner’s statement (i.e., no Reply Brief has been filed). For these reasons, we are not persuaded by Appellant’s argument for reversal of the rejection. SUMMARY We affirm the rejections of claims 1 and 3-12. No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a). AFFIRMED 10 Appellant disputes the Examiner’s findings regarding Shimoida, but the Examiner no longer relies on Shimoida in rejecting claim 1. Ans. 3 (withdrawing the rejection of claims 1, 3-6, and 8-12 under 35 U.S.C. § 103(a) over Shimoida, Korec, and Cao). 5 Copy with citationCopy as parenthetical citation