Ex Parte LeeDownload PDFPatent Trial and Appeal BoardAug 30, 201713185793 (P.T.A.B. Aug. 30, 2017) Copy Citation United States Patent and Trademark Office UNITED STATES DEPARTMENT OF COMMERCE United States Patent and Trademark Office Address: COMMISSIONER FOR PATENTS P.O.Box 1450 Alexandria, Virginia 22313-1450 www.uspto.gov APPLICATION NO. FILING DATE FIRST NAMED INVENTOR ATTORNEY DOCKET NO. CONFIRMATION NO. 13/185,793 07/19/2011 Sang In LEE 27276-18707 3030 758 7590 09/01/2017 FF.NWTPK fr WF.ST T T P EXAMINER SILICON VALLEY CENTER TUROCY, DAVID P 801 CALIFORNIA STREET MOUNTAIN VIEW, CA 94041 ART UNIT PAPER NUMBER 1718 NOTIFICATION DATE DELIVERY MODE 09/01/2017 ELECTRONIC Please find below and/or attached an Office communication concerning this application or proceeding. The time period for reply, if any, is set in the attached communication. Notice of the Office communication was sent electronically on above-indicated "Notification Date" to the following e-mail address(es): PTOC @Fenwick.com PTOL-90A (Rev. 04/07) UNITED STATES PATENT AND TRADEMARK OFFICE BEFORE THE PATENT TRIAL AND APPEAL BOARD Ex parte SANG IN LEE Appeal 2016-007815 Application 13/185,7931 Technology Center 1700 Before DONNA M. PRAISS, WESLEY B. DERRICK, and JENNIFER R. GUPTA, Administrative Patent Judges. DERRICK, Administrative Patent Judge. DECISION ON APPEAL STATEMENT OF THE CASE Appellant appeals under 35 U.S.C. § 134 from the maintained rejection under 35 U.S.C. § 103(a) of claims 1, 3-8, 21, 22, and 24-30. We have jurisdiction under 35 U.S.C. § 6. We AFFIRM. 1 Appellant identifies the owner of the subject patent application, Veeco ALD Inc., as the real party in interest. Appeal Br. 2. Appeal 2016-007815 Application 13/185,793 THE INVENTION The subject matter of the claims on appeal relates to a method of depositing layers of material on a substrate using atomic layer deposition (ALD) followed by surface treating the substrate with radicals of inert gas before subjecting the substrate to further deposition. Specification filed July 19,2011 (“Spec.”), Abstract. Claim 1—the sole independent claim— is representative. 1. A method of depositing one or more layers of material on a substrate, comprising: exposing a portion of a surface of the substrate to a first material; exposing the portion of the surface of the substrate to a second material after exposing to the first material; generating radicals in a chamber formed in an injector separated from the substrate by at least a predetermined distance, the radicals comprising at least one of Ar* radicals, H* radicals or N* radicals; moving the generated radicals into an injection cavity formed in the injector and connected to the chamber; exposing the portion of the substrate to the radicals in the injection cavity dimensioned to cause the radicals to flow over the portion of the substrate in the injection cavity and treat the portion of the surface of the substrate to have dangling bonds, after exposing the portion of the surface of the substrate to the first material and the second material; moving the radicals from the injectors to a constriction zone connected to the injection cavity, at least part of the radicals reverted to first gas of an inert state while moving the radicals to and through the constriction zone; removing excess second material from the surface of the substrate by passing at least the first gas reverted from the radicals through the constriction zone dimensioned to 2 Appeal 2016-007815 Application 13/185,793 constrict flow of the first gas over the surface of the substrate along a distance, the distance configured to remove an excess second material from the portion of the substrate, a concentration of the first gas relative to the radicals in the constriction zone higher than a concentration of the first gas relative to the radicals in the injection cavity; and exposing the treated surface of the substrate to a third material after exposing the portion of the substrate to the radicals. Appeal Brief filed January 12, 2016 (“Appeal Br.”), 20-21 (Claims App’x). THE REJECTIONS The claims stand rejected under 35 U.S.C. § 103(a) as follows: Claims 1, 3-7, 21, 22, and 24-30 over Lim2 in view of Sferlazzo,3 Kumar,4 and Oh,5 as evidenced by Foster6 and Dickey7; Claims 1, 3-7, 21, 22, 24-308 over Lim in view of Sferlazzo, Kumar, Oh, and Dickey; Claim 8 over Lim in view of Sferlazzo, Kumar, Sferlazzo ’055,9 and Oh, with or without Dickey; and Claim 24 over Lim in view of Sferlazzo, Kumar, Chiang,10 and Oh, with or without Dickey. 2 Lim et al., WO 2006/054854 Al, published May 26, 2006. 3 Sferlazzo, US 2010/0221426 Al, published September 2, 2010. 4 Kumar et al., US 2010/0048029 Al, published February 25, 2010. 5 Oh, US 2009/0165715 Al, published July 2, 2009. 6 Foster et al., US 5,567,243, issued October 22, 1996. 7 Dickey et al., US 2008/0026162 Al, published January 31, 2008. 8 The caption inadvertently includes previously canceled claim 23. Ans. 2. 9 Sferlazzo, US 6,972,055 B2, issued December 6, 2005. 10 Chiang et al., US 6,416,822 Bl, issued July 9, 2002. 3 Appeal 2016-007815 Application 13/185,793 DISCUSSION11 We have reviewed the grounds of rejection set forth by the Examiner, Appellant’s arguments, and the Examiner’s response. On this record, we are not persuaded that the Examiner erred in determining that one of ordinary skill in the art, at the time of the invention, armed with the knowledge of the cited prior art, would have been led to the subject matter of the claims within the meaning of 35 U.S.C. § 103(a). The Examiner relies on Lim for its disclosure of an atomic layer deposition (ALD) method for depositing one or more layers on the substrate including, inter alia, generating radicals of inert gas, the radicals comprising at least one of Ar radicals or N radicals, moving the radicals from the injection chamber towards the substrate via an injection cavity connected to the chamber, and exposing the surface of the substrate to radicals of inert gas to treat the surface. Ans. 2-3 (citing Lim Fig. 1). The Examiner further finds Lim’s Figure 1 to disclose ion exposure and exhausting to purge at the same time and reasons that “since inert gas ions will revert to an inert state” the requirement that “at least part of the radicals [have] reverted to first gas of an inert state” is met. Ans. 3 (citing Dickey ^ 21 and Foster cols. 8-9 as evidence that radicals formed of inert gas will recombine into inert gas before escaping the precursor chamber or adjoining passageway). The Examiner relies on Sferlazzo for its disclosure of an ALD method, which includes “sequentially moving a substrate underneath a 11 In this discussion, we refer to the Specification, the Non-Final Office Action dated September 2, 2015 (“Non-Final Act.”), the Appeal Brief, the Examiner’s Answer dated July 1, 2016 (“Ans.”), and the Reply Brief filed August 18, 2016 (“Reply Br.”). 4 Appeal 2016-007815 Application 13/185,793 delivery head that includes injectors in sequence, separated by exhausts, wherein each of the flows of gases are transferred across the substrate surface through a constriction zone.” Ans. 4 (citing Fig. 1). The Examiner further finds the injector in Sferlazzo to be separated from the substrate by a predetermined distance and the injection cavity to be connected to a constriction zone. Ans. 4. In so finding, the Examiner is maintaining that the regions—low gas conductance passages—formed under baffles separating the reaction chambers, e.g., 110, from vacuum chambers, e.g., 108, 112, to remove gas, are constriction zones within the meaning of the claims. The Examiner relies on Kumar for its disclosure of an ALD apparatus with a plasma chamber remote from the substrate for generating radicals, including radicals of argon, nitrogen, and hydrogen, for treatment of the ALD film. Ans. 5. As to the reformed gas flowing through the constriction zone removing excess material form the surface of the substrate, the Examiner finds that the reformed gas flowing through these constriction zones would inherently remove excess material from the surface of the substrate. Non- Final Act. 5-6; Ans. 4-6, 14-15. The Examiner further maintains that there is no factual evidence that the disclosed constriction zones would not result in the removal of second material and no basis in the Specification that a specific degree of constriction is required, and that, accordingly, “any degree of constriction over any length will necessarily result in removal of excess material as claimed.” Appeal Br. 14-16. Explaining that the instant invention takes advantage of the Venturi effect that allows the flow rate of constricted gas flowing through the 5 Appeal 2016-007815 Application 13/185,793 constriction zone to be significantly increased, Appellant contends that none of the references discloses a constriction zone dimensioned to constrict the flow of the gas such that it removes excess material from the surface of the substrate. Appeal Br. 6-12. Appellant’s argument focuses on the disclosed purpose of the constriction zone. As to Sferlazzo’s baffle structure, Appellant cites the disclosed purpose of isolating the chambers to maintain a desired local pressure inside chambers and that, in accomplishing this purpose, the baffles can be different and/or have different gaps. Appeal Br. 9 (citing Sferlazzo ^ 39). Appellant contends that Sferlazzo fails to “address or contemplate the concept of enabling leaking or passing of the materials through the baffles with a specific structure to remove excess materials from the substrate” and argue, accordingly, that “Sferlazzo does not disclose or suggest the feature of ‘through the constriction zone dimensioned to constrict flow of the first gas over the surface of the substrate along a distance, the distance configured to remove an excess second material from the portion of the substrate.’” Appeal Br. 9. Appellant further argues that “it is unclear from . . . Sferlazzo whether precursor material flowing under the baffles [] would result in removal or additional deposition of precursor material” and that “Sferlazzo would not require separate purge gas chambers” if Sferlazzo’s baffles “caused removal of excess second material.” Reply Br. 3. Appellant’s argument is unpersuasive of reversible error because it fails to address the rejection grounded on the process of Lim using chambers having the structure of Sferlazzo’s, i.e., chambers defined by baffles allowing constricted flow, and on the finding that the relied on structure would inherently function to remove excess second material from the 6 Appeal 2016-007815 Application 13/185,793 portion of the substrate. Appellant directs us to no evidence or persuasive argument to rebut the Examiner’s determination that the relied on baffles would function as a constriction zone allowing the passage of gas, that the velocity of the gas through this zone would be increased by the constriction, and that this increased velocity flow of gas would necessarily function to remove a portion of the substrate. See generally Appeal Br.; Reply Br. Appellant’s further argument grounded on potential deposition of precursor material flowing under baffles and the requirement in Sferlazzo for separate purge chambers is unpersuasive because it fails to address the rejection set forth by the Examiner in which Lim’s process is conducted using chambers with baffles, not Sferlazzo’s process. Cf. In re Keller, 642 F.2d 413, 425 (CCPA 1981) (“The test for obviousness ... is what the combined teachings of the references would have suggested to those of ordinary skill in the art.”); see also In re Merck & Co., Inc., 800 F.2d 1091, 1097 (Fed. Cir. 1986) (Each reference cited by the Examiner “must be read, not in isolation, but for what it fairly teaches in combination with the prior art as a whole.”). Appellant further contends that even if the dimensions of baffles in Sferlazzo could be configured to remove excess material, doing so would not be obvious because Sferlazzo (and Oh) teach away. Appeal Br. 13 (citing Sferlazzo ^ 39, for maintaining the pressure of materials in the chambers, and Oh 55, for deterring radicals from leaking outside the injection unit). Appellant argues “Sferlazzo and Oh each teach containment of material inside chambers of the reactors.” Appeal Br. 13. On this record, we are not persuaded there is a teaching away. We find no support in Sferlazzo as it discloses flow underneath the baffles. 7 Appeal 2016-007815 Application 13/185,793 Sferlazzo ^ 39, Fig. 1; see also Ans. 16-17. Likewise, we find no support in Oh’s paragraph 55 because neither the teaching to avoid mixing of injection materials, which is not implicated in the present combination, nor the teaching to increase efficiency of precursors reasonably leads the skilled artisan away from the invention. DyStar Textilfarben GmbH & Co. Deutschland KG v. C.H. Patrick Co., 464 F.3d 1356, 1364 (Fed. Cir. 2006) (“We will not read into a reference a teaching away from a process where no such language exists.”). “A reference does not teach away ... if it merely expresses a general preference for an alternative invention but does not ‘criticize, discredit, or otherwise discourage’ investigation into the invention claimed.” DePuy Spine, Inc. v. Medtronic Sofamor Danek, Inc., 567 F.3d 1314, 1327 (Fed. Cir. 2009) (quoting In re Fulton, 391 F.3d 1195, 1201 (Fed. Cir. 2004)). Appellant contends that the Examiner’s rejection relies on impermissible hindsight in the combination of Lim, Kumar, Oh, and Sferlazzo. Appeal Br. 13-16. Appellant contends that the Examiner has asserted a first feature that can be met by a combination of teachings from Lim and Sferlazzo OR a combination of teachings from Lim and Oh (e.g., Fig. 5) and asserted a second feature that can be met by a combination of teachings from Lim and Kumar OR a combination of teachings from Lim and Oh (e.g., ^ 65). Appeal Br. 14-15. Appellant then argues that the Examiner’s disassembling of Oh into different elements and subsequent combination of these elements with Lim and Sferlazzo to arrive at the claimed invention constitutes impermissible hindsight. Appeal Br. 16. Appellant’s argument is unpersuasive of harmful error, particularly as the rejection, as set forth above, and as highlighted by Appellant in the 8 Appeal 2016-007815 Application 13/185,793 argument, requires no teaching from Oh. Appellant’s focus, accordingly, on the Examiner’s reliance on different portions of Oh for its teaching relating to an exhaust unit and an injection unit, respectively, is of no import. Cf. In re Boyer, 363 F.2d 455, 458 n.2 (CCPA 1966) (citing In re Bush, 296 F.2d 491 (CCPA 1961) (The Board may rely on less than all of the references applied by the Examiner in an obviousness rationale without designating it as a new ground.). As to the combination of Fim with Sferlazzo and Kumar, we discern no cogent argument that the Examiner has failed to properly articulate a sufficient motivation and so are unpersuaded that the rejection is grounded on impermissible hindsight. See In re Kahn, 441 F.3d 977, 988 (Fed. Cir. 2006) (requiring “some articulated reasoning with some rational underpinning to support the legal conclusion of obviousness”) (cited with approval in KSR Inti Co. v. Teleflex Inc., 550 U.S. 398, 418 (2007)). Further, “the burden of showing that the error is harmful normally falls upon the party attacking the agency’s determination,” In re Chapman, 595 F.3d 1330, 1338 (Fed. Cir. 2010) (quoting Shinseki v. Sanders, 556 U.S. 396, 409 (2009), and we find no sufficient basis in Appellant’s argument to establish harmful error in the Examiner’s prima facie case of obviousness. Appellant further contends that there is no proper motivation to combine the cited references because the combination including Oh would have rendered Oh unsatisfactory for its intended purpose. Appeal Br. 16-17 (citing In re Gordon, 733 F.2d 900 (Fed. Cir. 1984)). Referring to Oh’s disclosure, Appellant argues that the combination of injection unit 41 that relies on guards to prevent leakage of precursor and separate exhaust unit 42 that purges excess reactants from the surface of the substrate would render 9 Appeal 2016-007815 Application 13/185,793 either the deposition of precursor or removal of excess reactants unsatisfactory. Appeal Br. 16-17 (citing Oh]fl| 35, 55, Figs. 9, 23). Appellant’s argument is unpersuasive of harmful error, both because we affirm the rejection without relying on Oh and because we are not persuaded that the combination including Oh’s teachings as set forth by the Examiner constitutes an impermissible modification of the prior art. First, having determined it is unnecessary to rely on Oh, any determination that Oh is not properly combined does not identify harmful error in the Examiner’s decision that claim 1 was unpatentable within the meaning of 35 U.S.C. § 103(a) over the cited prior art. Turning then to Appellant’s argument, even as it relates to the rejection including Oh, we find it insufficient because it merely contends that the results would be unsatisfactory, not that it would have been inoperable. See In re Urbanski, 809 F.3d 1237, 1243 (Fed. Cir. 2016) (quoting In re Sponnoble, 405 F.2d 578, 587 (1969) (“[I]f references taken in combination would produce a ‘seemingly inoperative device,’ . . . such references teach away from the combination and thus cannot serve as predicates for a prima facie case of obviousness.”). For these reasons, we sustain the rejection of claims 1, 3-7, 21, 22, and 24-30 over Lim in view of Sferlazzo and Kumar. As to the further rejections, Appellant maintains that the further cited references—Dickey, Sferlazzo ’055, and Chiang—do not cure the deficiencies of the rejection grounded on the combination of Lim, Sferlazzo, Kumar and Oh. Appeal Br. 17-19. On this record, we are not apprised of reversible error in the further rejections. Except as to the rejection of claim 8, the Examiner relies on Oh for no more than in the rejection of claim 1 as discussed above. In rejecting 10 Appeal 2016-007815 Application 13/185,793 claim 8, the Examiner finds “Oh discloses linear processing or rotating processing” and that “rotation is a known technique for passing a substrate through sequential treatment.” Ans. 10 (citing Oh ^ 35). The reliance on Oh is unnecessary in light of the further cited reference—Sferlazzo ’055. Like Lim and Sferlazzo, Sferlazzo ’055 is directed to ALD and is cited for its disclosure of a method using smaller chambers and rotating the substrate around between each chamber using a rotating turntable technique to reap benefits including increased throughput and deposition quality. Ans. 10 (citing Sferlazzo ’055 col. 3,11. 21-30, col. 4,11. 56-65, Fig. 3). Where the rejection sets forth that Sferlazzo ’055 itself teaches that the use of rotation was a known technique, and that it provided benefits of improved throughput and quality, the reliance on Oh for teaching rotation is a predictable, known technique that would have motivated the modification is unnecessary to sustain the ground of rejection. Cf. Boyer, 363 F.2d at 458. On balance, the evidence of record weighs most heavily in favor of the Examiner’s conclusion of obviousness of the claims. DECISION The Examiner’s decision rejecting claims 1, 3-8, 21, 22, and 24-30 is AFFIRMED. No time period for taking any subsequent action in connection with this appeal may be extended under 37 C.F.R. § 1.136(a)(l)(iv). AFFIRMED 11 Copy with citationCopy as parenthetical citation